WT7510.pdf


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WT7510
Rev. 2.31

ELECTRICAL CHARACTERISTICS, at Ta=25°°C and VCC=5V.
Over Voltage Detection
Parameter
Over voltage threshold

Condition

V33
V5
Vcc / V12
ILEAKAGE Leakage current (FPL_N)
VOL Low level output voltage (FPL_N)

Min.
3.7
5.7
12.8

Typ.
3.9
6.1
13.4
5
0.3
0.7

Max.
4.1
6.5
13.9

Unit
V
V
V
uA
V

Min.
2.55
4.1
1.16

Typ.
2.69
4.3
1.20
5
0.4

Max.
2.83
4.47
1.24

Unit
V
V
V
uA
V

Min.

Typ.
150

Max.

Unit
uA
V
V

V(FPL_N) = 5V
Isink 10mA
Isink 30mA

PGI and PGO
Parameter
Under voltage threshold

Condition
V33
V5

Input threshold voltage(PGI)
ILEAKAGE Leakage current(PGO)
VOL
Low level output voltage(PGO)

PGO = 5V

PDON_N
Parameter
Input pull-up current
High-level input voltage
Low-level input voltage

Condition
PDON_N= 0V

2.0
0.8

TOTAL DEVICE
Parameter
Icc Supply current
Vcc low voltage

Condition
PDON _N= 5V

Min.

Typ.

Max.
1

3

SWITCHING CHARACTERISTICS, Vcc=5V
Parameter
Condition
Min.
Typ.
Max.
tdb1
De-bounce time (PDON_N)
32
38
61
tdleay1 Delay time (PGI to PGO)
200
300
490
tdb2
De-bounce time (PDON_N)
32
38
61
tg
De-glitch time
63
73
120
tdelay2 PDON_N to FPL_N delay time
tdb2+2.0 tdb2+2.4 tdb2+3.8
tdelay3 Internal UVD delay time
FPL_N go low &
65
75
122
every time PGI > 1.2V

Weltrend Semiconductor, Inc.
Page 4

Unit
mA
V

Unit
mS
mS
mS
uS
mS
mS