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09 546 1 100% Abstract We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene.


Mat Final Equations adapted 64%

Relation for interfacial E Critical Radius for SSP Activation free energy for formation of SSP Particle Growth Rate Fraction of Transformation - Avrami Transformation Rate Notes Chapter 11 Usage Notes


introduction to chemical engineering ch (8) 61%

Therefore, the transport rate increases with an increase in the interfacial area.


Brettis Elesa ELECTRON 60%

ensayo Aspecto Densidad 15ºC, g/cc Viscosidad 40ºC, cSt Viscosidad -30ºC, cSt Punto Congelación, ºC Punto Inflamación, ºC Factor de pérdidas dieléctricas DDF a 90ºC Tensión interfacial, mín., mN/m Tensión de ruptura • Antes de tratamiento, kV • Después de tratamiento, kV ESTABILIDAD A LA OXIDACION Lodos, % peso Acidez total, mg KOH/g DDF/90ºC Azufre corrosivo Antioxidante, fenoles, % peso Norma elesa® ELECTRON TRANSFORMADORES ISO 12185 ISO 3104 ISO 3104 ISO 3016 ISO 2719 IEC 60247 Límpido 0.870 10 1000 -46 145 0.001 ISO 6295 48 IEC 60156 IEC 60296 / 60156 IEC 61125 C IEC 61125 C IEC 61125 C DIN 51353 IEC 62535 IEC 60666 40-60 >70 0.12 <0.47 0.060 No corrosivo No detectable La información contenida en este folleto es, según nuestro criterio correcta.


von Winckel cv 38%

Buchanan, Effect of doped substrate on GaAs-AlGaAs interfacial workfunction IR detector response through cavity effect, IEEE Transactions on Electron Devices, 52,3, (2005), 413-418 A.G.U.


Lamour JCE 2010 28%

This balance is described by Young's equation (9) that relates the contact angle to the surface free energies of a system containing solid (S), liquid (L), and vapor (V) phases ð1Þ γSV - γSL ¼ γLV cos θ where γSV is the solid surface free energy, γLV is the liquid surface free energy (also called surface tension), and γSL is the solidliquid interfacial free energy.


DBCPsoftmatter2016 24%

Similarly as in the case of phase field models to solve interfacial problems,71–73 the proposed approach has the following advantages: