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Integration of Active Elements onto Low Loss Waveguides for Silicon Interposers John Bowers Director, Institute for Energy Efficiency Kavli Professor of Nanotechnology Departments of Materials and Electrical and Computer Engineering University of California, Santa Barbara firstname.lastname@example.org http://optoelectronics.ece.ucsb.edu/ UCSB:
Basic Board Mount Pressure Sensors ABP Series—High Accuracy Digital or Analog Output Compensated/Amplified 60 mbar to 10 bar | 6 kPa to 1 MPa | 1 psi to 150 psi Datasheet Basic Amplified Board Mount Pressure Sensors The Basic Amplified ABP Series is a piezoresistive silicon pressure sensor offering a ratiometric analog or digital output for reading pressure over the specified full scale pressure span and temperature range.
International Journal Of Computational Engineering Research||Vol, 03||Issue, 7|| Absorption of Light in Silicon Nanowire Solar Cells:
Innovative optics provides performance comparable to other monocrystalline PV modules while using half the silicon cells.
Neoprene(Chloropene), EPDM, Silicon, Natural Rubber(NR-SBR), Viton and Polyurethane - Electrical Insulating Mat (ribbed) for 1kV-35kV - Belts :
K30A O 1D (“2nd Group Buy” No01) N-Ch JFET Red-G, Symmetrical Src/Drn Vgs(off)=-0.90V at Id=4.8µA Vgs(on)=0.28V at Id=1.92mA gfs=2.7mA/V at Id=1.2mA to 1.9mA Idss=1.19mA at Vds=3.00V Rds(on)=418.7Ω at Id=1.9mA and Vgs=0.0V K30A Y 3E (“2nd Group Buy” No01) N-Ch JFET Red-G, Symmetrical Src/Drn Vgs(off)=-0.36V at Id=4.5µA Vgs(on)=0.22V at Id=5.00mA gfs=17.8mA/V at Id=3.0mA to 5.0mA Idss=1.70mA at Vds=3.00V Rds(on)=42.8Ω at Id=5.0mA and Vgs=0.0V C1583 86F (“2nd Group Buy” No01) NPN Silicon BJT Red-C Green-B Blue-E hFE=379 at Ic=5.01mA Vbe=0.764V at Ib=5.00mA VceSat=0.033V at Ic=5.0mA and Ib=1.00mA IcLeak=0.000mA NPN Silicon BJT Red-C Green-B Blue-E hFE=370 at Ic=4.99mA Vbe=0.768V at Ib=5.00mA VceSat=0.033V at Ic=5.0mA and Ib=1.00mA IcLeak=0.000mA C1583 86F (“2nd Group Buy” No02) NPN Silicon BJT Red-E Green-C Blue-B hFE=421 at Ic=5.02mA Vbe=0.762V at Ib=5.00mA VceSat=0.036V at Ic=5.0mA and Ib=1.00mA IcLeak=0.000mA NPN Silicon BJT Red-E Green-C Blue-B hFE=425 at Ic=5.00mA Vbe=0.758V at Ib=5.00mA VceSat=0.037V at Ic=5.0mA and Ib=1.00mA IcLeak=0.000mA
Taco Seasoning, [Salt, Chili Powder ( Chili, Cumin, Oregano, Spices, Salt), Dextrose, Garlic, Cumin, Paprika, Cayenne Pepper, Red Pepper, Soybean Oil, Garlic, Silicon Dioxide, Extractives of Paprika], Onion, Red Bell Pepper, Jalapeno, Jolokia, Habanero, Garlic, Spices, Maltodextrin, Natural Hickory Smoke Flavor Net Wt.
Evaluate and characterize adhesion strength of singulated chips with silicon nitride and tantalum backing off of a silicon wafer Problem:
For any give voltage range, the SuperFlash technology uses less current to program and ©2006 Silicon Storage Technology, Inc.
LOWER POWER SUPERIOR PERFORMANCE HIGHER INTEGRATION Company Snapshot Company Information Founded September 2003 MaxLinear is a provider of highly-integrated Radio Frequency (RF) analog and mixed signal semiconductor System on a Chip (SoC) solutions for broadband communications applications offering high levels of performance, small silicon die size, and low power consumption.
An image of the described sample plane captured via scanning electron microscope (SEM) back-scattered electron (BSE) imaging.} The resultant spectrum from an individual EDS compositional spot analysis indicates that the matrix is of a mafic composition with average atomic weight percentages (At%) of 21.38% silicon, 39.95% oxygen, 16.71% magnesium, 4.07% aluminum, 2.08% calcium, and 14.50% iron.
LAZARIDIS SCHOOL QUICK FACTS “WORK HARD, PLAY HARD” …..IN THE SILICON VALLEY OF THE NORTH The Lazaridis School of Business &