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Total: 60 results - 0.032 seconds

ECSyllabus 100%

Operating Point, Common-EmitterConfiguration, Thermal Runaway, Transistor Switch, Unijunction Transistors, SCR.

https://www.pdf-archive.com/2015/08/23/ecsyllabus/

23/08/2015 www.pdf-archive.com

ECUnit2 96%

Bipolar Junction Transistors 2.1 Bipolar junction transistor (BJT) The bipolar junction transistor (BJT) was the first solid-state amplifier element and started the solid-state electronics revolution.

https://www.pdf-archive.com/2015/08/23/ecunit2/

23/08/2015 www.pdf-archive.com

ECUnit1 95%

Transistor, UJT’s, and Thyristors In the Diode tutorials we saw that simple diodes are made up from two pieces of semiconductor material, either silicon or germanium to form a simple PN-junction and we also learnt about their properties and characteristics.

https://www.pdf-archive.com/2015/08/23/ecunit1/

23/08/2015 www.pdf-archive.com

IJETR011811 95%

BiCMOS is an evolved semiconductor technology that integrates two formerly separate semiconductor technologies - those of the bipolar junction transistor and the CMOS transistor - in a single integrated circuit device.

https://www.pdf-archive.com/2017/12/27/ijetr011811/

27/12/2017 www.pdf-archive.com

booster 144 mhz 90%

Mosfet dan Transistor 13.

https://www.pdf-archive.com/2017/05/18/booster-144-mhz/

18/05/2017 www.pdf-archive.com

11I16-IJAET0916844 v6 iss4 1535to1540 87%

INDEX TERMS - MOSFET, Graphene, Nanoelectronics, transistor scaling, Graphene-FET (G-FET), Dirac point, ballistic transport.

https://www.pdf-archive.com/2014/07/04/11i16-ijaet0916844-v6-iss4-1535to1540/

04/07/2014 www.pdf-archive.com

final thesis oct22 86%

Another method of improving the TFT performance is by modifying the transistor structure.

https://www.pdf-archive.com/2016/04/29/final-thesis-oct22/

29/04/2016 www.pdf-archive.com

Cse675.02.D.LogicDesign part1 85%

the transistor = “on/off switch” • Digital signals – voltage levels high/low – Transistors are used to build logic gates – Logic gates make up functional and control units – Microprocessors contain several functional and control units • This section provides an introduction into digital logic – Combinatorial and sequential logic – Boolean algebra and truth tables – Basic logic circuits:

https://www.pdf-archive.com/2014/10/28/cse675-02-d-logicdesign-part1/

28/10/2014 www.pdf-archive.com

09 546 1 84%

10.11591/eei.v5i1.546  79 Organic Semiconductor and Transistor Electrical Characteristic Based on Carbon Nanotubes 1 1,2 Kianoosh Safari, 2Ali Rafiee, 3Hamidreza-Dalili-Oskouei Department Of Electrical and Electronic Engineering, Islamic Azad University, Bushehr Branch, Bushehr, Iran 3 University of Aeronautical Science &

https://www.pdf-archive.com/2016/09/25/09-546-1/

25/09/2016 www.pdf-archive.com

Report 84%

https://www.pdf-archive.com/2013/02/17/report/

17/02/2013 www.pdf-archive.com

10 10Nov15 547-1059-1-ED 83%

10.11591/eei.v5i1.547  88 Organic Thin Film Transistor with Carbon Nanotube Electrodes 1,2 Kianoosh Safari*1, Ali Rafiee2, Hamidreza-Dalili-Oskouei3 Department Of Electrical and Electronic Engineering, Islamic AzadUniversity, Bushehr Branch, Bushehr, Iran 3 University of Aeronautical Science &

https://www.pdf-archive.com/2016/09/25/10-10nov15-547-1059-1-ed/

25/09/2016 www.pdf-archive.com

extc sem4 ae-ii assignments 82%

Write short note on Current Mirror Circuit with 3 Transistor BJT.

https://www.pdf-archive.com/2015/04/11/extc-sem4-ae-ii-assignments/

11/04/2015 www.pdf-archive.com

bucket-alarm 78%

bucket alarm Sohoj-electronics Asom BATH BUCKET ALARM TESTED VERSION VERY SIMPLE-version1 ================================================ বাকেত ত পানী গৰম েৰৰকে ই সময়ত ৰবপ ৰিকয় So tested the circuit simple circuit no zener , just 2 transistors it is working nicely Cost 50Rs for parts Parts List Transistor PNP BC557 NPN BC547 1N4007 [pull from old circuits ] , 1K,5.6k ,[ if not preset 2.2K,820ohms ] 1/4watt 10K thermistor , 10K preset ,board some wires,9v battery etc Version2 eta water sensor loguwaase to eliminate ON/off

https://www.pdf-archive.com/2014/12/18/bucket-alarm/

18/12/2014 www.pdf-archive.com

IJEAS0405013 77%

Power efficient and less transistor count technique for logic designs Neha Mishra, G.R.Mishra  Abstract— GDI, i.e., Gate Diffusion Input is the latest technology for the designing of VLSI circuits.

https://www.pdf-archive.com/2017/09/10/ijeas0405013/

10/09/2017 www.pdf-archive.com

21I18-IJAET0118638 v6 iss6 2496-2507 76%

Another approach, on which we focus here, maintains the operating principles of the currently used devices, primarily that of the field-effect transistor, but replaces the conducting channel with carbon nanomaterials such as one-dimensional (1D) Carbon NanoTubes or two-dimensional (2D) graphene layers.

https://www.pdf-archive.com/2014/07/04/21i18-ijaet0118638-v6-iss6-2496-2507/

04/07/2014 www.pdf-archive.com

15 P 254-priyagupta Mar16 74%

In paper [4], a new nine-transistor (9T) SRAM cell has been designed at 65nm technology for reducing leakage power and enhancing data stability.

https://www.pdf-archive.com/2016/09/25/15-p-254-priyagupta-mar16/

25/09/2016 www.pdf-archive.com

Shoe Silver Apple Manual 72%

Other transistor options are, of course, available if specified and your Silver Apple may use other transistor types if requested.

https://www.pdf-archive.com/2012/02/26/shoe-silver-apple-manual/

26/02/2012 www.pdf-archive.com

Monogram pre-power info 71%

310 0 3eo€t PGIVVEFI AMPLIFIEFIS J The MONOGRAM 3100 and 3200 represent a three year intensive design effort to produce solid state power amplifiers producing a smooth VALVE SOUND without the tiring clinical sound associated with current transistor designs.

https://www.pdf-archive.com/2019/08/19/monogram-pre-power-info/

19/08/2019 www.pdf-archive.com

IJETR2158 68%

Moreover, for transistor with reduced dimensions, it is very much troublesome tocreate ultra-sharp junctions in source/ drain, avoiding diffusion of impurities into the channel.

https://www.pdf-archive.com/2017/09/09/ijetr2158/

09/09/2017 www.pdf-archive.com

10N13-IJAET0313446 revised 67%

The model has been applied to characterize the electrical and thermal performances of a multifinger GaAs FET and of a Si/SiGe Heterojunction Bipolar Transistor.

https://www.pdf-archive.com/2013/05/13/10n13-ijaet0313446-revised/

13/05/2013 www.pdf-archive.com