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Results for «transistor»:

Total: 100 results - 0.064 seconds

ECUnit1 100%

Transistor, UJT’s, and Thyristors In the Diode tutorials we saw that simple diodes are made up from two pieces of semiconductor material, either silicon or germanium to form a simple PN-junction and we also learnt about their properties and characteristics.


23/08/2015 www.pdf-archive.com

ECSyllabus 97%

Operating Point, Common-EmitterConfiguration, Thermal Runaway, Transistor Switch, Unijunction Transistors, SCR.


23/08/2015 www.pdf-archive.com

31N19-IJAET0319423 v7 iss1 274-282 96%

This paper presents a comparison of existing flip-flop classes in terms of transistor count, parasitic values and power dissipation.


04/07/2014 www.pdf-archive.com

19I17-IJAET1117394 v6 iss5 2123-2133 95%

Transistor M4 is on when Node3 is discharged to 0 V.


04/07/2014 www.pdf-archive.com

7I10-IJAET0520952 v7 iss2 352-358 95%

In flip-flop design only one transistor is being clocked by short pulse train which is known as True Single Phase Clocking (TSPC) flip-flop.


04/07/2014 www.pdf-archive.com

ECUnit2 95%

Bipolar Junction Transistors 2.1 Bipolar junction transistor (BJT) The bipolar junction transistor (BJT) was the first solid-state amplifier element and started the solid-state electronics revolution.


23/08/2015 www.pdf-archive.com

27I17-IJAET1117391 v6 iss5 2196-2210 95%

By using the low power technique we have reduced the power of the dynamic CMOS comparator from 16% to 45% .Cadence tool was used to implement the comparator in transistor level .The measured and simulation results show that the dynamic latched comparator design has higher speed, low power dissipation.


04/07/2014 www.pdf-archive.com

15 P 254-priyagupta Mar16 95%

In paper [4], a new nine-transistor (9T) SRAM cell has been designed at 65nm technology for reducing leakage power and enhancing data stability.


25/09/2016 www.pdf-archive.com

issyll2010 Syllabus 95%

Operating Point, Common-Emitter Configuration, Thermal Runaway, Transistor Switch, Unijunction Transistors, SCR.


07/02/2014 www.pdf-archive.com

IJETR011811 95%

BiCMOS is an evolved semiconductor technology that integrates two formerly separate semiconductor technologies - those of the bipolar junction transistor and the CMOS transistor - in a single integrated circuit device.


27/12/2017 www.pdf-archive.com

Digital logic, an inverter or NOT gate 93%

Inverters can be constructed using a single NMOS transistor or a single PMOS transistor coupled with a resistor.


23/03/2018 www.pdf-archive.com

08 458-704-1-SM 91%

In this method the sleep transistor is inserted in series with the supply voltage (or) current source to reduce the power.


25/09/2016 www.pdf-archive.com

IJEAS0405013 91%

Power efficient and less transistor count technique for logic designs Neha Mishra, G.R.Mishra  Abstract— GDI, i.e., Gate Diffusion Input is the latest technology for the designing of VLSI circuits.


10/09/2017 www.pdf-archive.com

booster 144 mhz 90%

Mosfet dan Transistor 13.


18/05/2017 www.pdf-archive.com

ECUnit4 89%

There are three basic configurations of single-stage or single-transistor FET amplifiers.


23/08/2015 www.pdf-archive.com

extc sem4 ae-ii assignments 89%

Write short note on Current Mirror Circuit with 3 Transistor BJT.


11/04/2015 www.pdf-archive.com

15I14-IJAET0514207 v6 iss2 696to702 88%

The first scheme of Spintronics devices based on the metal oxide semiconductor technology was the first field effect Spin transistor proposed in 1989 by Suprio Datta and Biswajit Das of Purdue University.


13/05/2013 www.pdf-archive.com

F0371029032 88%

In the common-source configuration, the signal is applied to the base or gate of the transistor and the amplified output is taken from the drain.


13/11/2013 www.pdf-archive.com

IJETR2158 88%

Moreover, for transistor with reduced dimensions, it is very much troublesome tocreate ultra-sharp junctions in source/ drain, avoiding diffusion of impurities into the channel.


09/09/2017 www.pdf-archive.com

11I16-IJAET0916844 v6 iss4 1535to1540 87%

INDEX TERMS - MOSFET, Graphene, Nanoelectronics, transistor scaling, Graphene-FET (G-FET), Dirac point, ballistic transport.


04/07/2014 www.pdf-archive.com

21I18-IJAET0118638 v6 iss6 2496-2507 86%

Another approach, on which we focus here, maintains the operating principles of the currently used devices, primarily that of the field-effect transistor, but replaces the conducting channel with carbon nanomaterials such as one-dimensional (1D) Carbon NanoTubes or two-dimensional (2D) graphene layers.


04/07/2014 www.pdf-archive.com

10 10Nov15 547-1059-1-ED 86%

10.11591/eei.v5i1.547  88 Organic Thin Film Transistor with Carbon Nanotube Electrodes 1,2 Kianoosh Safari*1, Ali Rafiee2, Hamidreza-Dalili-Oskouei3 Department Of Electrical and Electronic Engineering, Islamic AzadUniversity, Bushehr Branch, Bushehr, Iran 3 University of Aeronautical Science &


25/09/2016 www.pdf-archive.com

final thesis oct22 86%

Another method of improving the TFT performance is by modifying the transistor structure.


29/04/2016 www.pdf-archive.com

LDUnit1 85%

The following are the examples of logic families based on the devices used and their structure, • DTL :Diode Transistor Logic • RTL :Resistor Transistor Logic • TTL :Transistor Transistor Logic • ECL :Emitter Coupled Logic • CMOS :Complementary MOSFET Logic The various logic families differ in the current driving capabilities,Logic Levels, propagation delays and a few other other parameters.


23/08/2015 www.pdf-archive.com

Alan-8001 85%

de FM AN612 Modulador Balanceado de SSB TA7222AP Amplificador de Áudio NJM4558 Amplificador operacional duplo TA6324 Amplificador operacional quádruplo 2SC1969 Transistor de saída de RF (Superstar 3900) 2SC2312 Transistor de saída de RF (Alan 8001) 2SC2166 Transistor Driver de RF 2SC2086 Transistor Pré-Driver de RF 2SB754 Transistor de potência de áudio 2SA473 Transistor de potência de áudio


29/03/2014 www.pdf-archive.com