PDF Archive search engine
Last database update: 24 September at 23:19 - Around 220000 files indexed.
Results for «transistor»:
Total: 100 results - 0.064 seconds
Transistor, UJT’s, and Thyristors In the Diode tutorials we saw that simple diodes are made up from two pieces of semiconductor material, either silicon or germanium to form a simple PN-junction and we also learnt about their properties and characteristics.
Operating Point, Common-EmitterConfiguration, Thermal Runaway, Transistor Switch, Unijunction Transistors, SCR.
This paper presents a comparison of existing flip-flop classes in terms of transistor count, parasitic values and power dissipation.
Transistor M4 is on when Node3 is discharged to 0 V.
In flip-flop design only one transistor is being clocked by short pulse train which is known as True Single Phase Clocking (TSPC) flip-flop.
By using the low power technique we have reduced the power of the dynamic CMOS comparator from 16% to 45% .Cadence tool was used to implement the comparator in transistor level .The measured and simulation results show that the dynamic latched comparator design has higher speed, low power dissipation.
In paper , a new nine-transistor (9T) SRAM cell has been designed at 65nm technology for reducing leakage power and enhancing data stability.
Operating Point, Common-Emitter Configuration, Thermal Runaway, Transistor Switch, Unijunction Transistors, SCR.
BiCMOS is an evolved semiconductor technology that integrates two formerly separate semiconductor technologies - those of the bipolar junction transistor and the CMOS transistor - in a single integrated circuit device.
Inverters can be constructed using a single NMOS transistor or a single PMOS transistor coupled with a resistor.
08 458-704-1-SM 91%
In this method the sleep transistor is inserted in series with the supply voltage (or) current source to reduce the power.
Power efficient and less transistor count technique for logic designs Neha Mishra, G.R.Mishra Abstract— GDI, i.e., Gate Diffusion Input is the latest technology for the designing of VLSI circuits.
The first scheme of Spintronics devices based on the metal oxide semiconductor technology was the first field effect Spin transistor proposed in 1989 by Suprio Datta and Biswajit Das of Purdue University.
In the common-source configuration, the signal is applied to the base or gate of the transistor and the amplified output is taken from the drain.
INDEX TERMS - MOSFET, Graphene, Nanoelectronics, transistor scaling, Graphene-FET (G-FET), Dirac point, ballistic transport.
Another approach, on which we focus here, maintains the operating principles of the currently used devices, primarily that of the field-effect transistor, but replaces the conducting channel with carbon nanomaterials such as one-dimensional (1D) Carbon NanoTubes or two-dimensional (2D) graphene layers.
10.11591/eei.v5i1.547 88 Organic Thin Film Transistor with Carbon Nanotube Electrodes 1,2 Kianoosh Safari*1, Ali Rafiee2, Hamidreza-Dalili-Oskouei3 Department Of Electrical and Electronic Engineering, Islamic AzadUniversity, Bushehr Branch, Bushehr, Iran 3 University of Aeronautical Science &
Another method of improving the TFT performance is by modifying the transistor structure.
The following are the examples of logic families based on the devices used and their structure, • DTL :Diode Transistor Logic • RTL :Resistor Transistor Logic • TTL :Transistor Transistor Logic • ECL :Emitter Coupled Logic • CMOS :Complementary MOSFET Logic The various logic families differ in the current driving capabilities,Logic Levels, propagation delays and a few other other parameters.
de FM AN612 Modulador Balanceado de SSB TA7222AP Amplificador de Áudio NJM4558 Amplificador operacional duplo TA6324 Amplificador operacional quádruplo 2SC1969 Transistor de saída de RF (Superstar 3900) 2SC2312 Transistor de saída de RF (Alan 8001) 2SC2166 Transistor Driver de RF 2SC2086 Transistor Pré-Driver de RF 2SB754 Transistor de potência de áudio 2SA473 Transistor de potência de áudio