BFR96S datasheet (PDF)

14

BFR96, BFR96S
N-P-N bipolar silicon RF transistors
4.8
0.24
2,7

1.2

8.4

5.5

1.4
0.9

1

2

Transistors are designed for
application in satellite
communication systems, small
signal amplifiers, wideband, low
noise, front end, high speed
switches, HF oscillators.
Plastic package SOT-37.

5.5

3

Pinouts:
1- Base, 2- Collector, 3-Emitter

Ratings
Symbol

Parameter, unit, test conditions

VCB0
VCE0
VEB0
IC

Collector- base voltage, V
Collector- emitter voltage, V
Emitter- base voltage, V
Collector current, mA,

Ptot

Power dissipation, mW
TA= -45 to +25°C
+70°C
TA=

Limits
20
15
3
75
100

BFR96
BFR96S

700
375

Characteristics (TA = 25°C)
Symbol

Parameter, unit, test conditions
min

fT
hFE

ICBO
IEBO
GP

F
CC

Transition frequency,GHz,
IE=50mA, VCB=10V
DC current gain,
IE=50mA, VCB=10V
IE=70mA, VCB=10V
Collector cut-off current, nA,
VCB=10V
Emitter cut-off current, µA,
VEB= 3V
DC current gain, dB,
IE=50mA, VCB=10V, f=500MHz
IE=50mA, VCB=10V, f=800MHz
Noise figure, dB,
IE=50mA, VCE=10V, f=800MHz
Collector capacitance, pF,
VCB=10V, f= 1MHz

Planeta
Electronic

company

Limits
max

3.2
BFR96
BFR96S

75
75
100
100

BFR96
BFR96S

13.5
9.0
3.6
2.0

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